Giant tunnel-electron injection in nitrogen-doped graphene

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Atomistic description of electron beam damage in nitrogen-doped graphene and single-walled carbon nanotubes.

By combining ab initio simulations with state-of-the-art electron microscopy and electron energy loss spectroscopy, we study the mechanism of electron beam damage in nitrogen-doped graphene and carbon nanotubes. Our results show that the incorporation of nitrogen atoms results in noticeable knock-on damage in these structures already at an acceleration voltage of 80 kV, at which essentially no ...

متن کامل

Evolution of Raman spectra in nitrogen doped graphene

0008-6223/$ see front matter 2013 Elsevi http://dx.doi.org/10.1016/j.carbon.2013.04.065 * Corresponding author: Fax: +86 025 5209060 E-mail address: [email protected] (Z.H. Ni We present systematical Raman studies of nitrogen doped graphene (NG). Defective graphene by Ar ion bombardment was also studied for comparison. It was found that the defects/nitrogen dopants in NG are not homogenous. Our r...

متن کامل

Charge transfer and electronic doping in nitrogen-doped graphene

Understanding the modification of the graphene's electronic structure upon doping is crucial for enlarging its potential applications. We present a study of nitrogen-doped graphene samples on SiC(000) combining angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and spectroscopy and X-ray photoelectron spectroscopy (XPS). The comparison between tunneling and angle-resolved ...

متن کامل

Low-resistance spin injection into silicon using graphene tunnel barriers.

Spin manipulation in a semiconductor offers a new paradigm for device operation beyond Moore's law. Ferromagnetic metals are ideal contacts for spin injection and detection, but the intervening tunnel barrier required to accommodate the large difference in conductivity introduces defects, trapped charge and material interdiffusion, which severely compromise performance. Here, we show that singl...

متن کامل

Anisotropic Eliashberg function and electron-phonon coupling in doped graphene

D. Haberer,1,2 L. Petaccia,3 A. V. Fedorov,1,4 C. S. Praveen,5 S. Fabris,5 S. Piccinin,5 O. Vilkov,4,6 D. V. Vyalikh,4,6 A. Preobrajenski,7 N. I. Verbitskiy,8,9 H. Shiozawa,8 J. Fink,1 M. Knupfer,1 B. Büchner,1 and A. Grüneis1,8 1IFW Dresden, P. O. Box 270116, D-01171 Dresden, Germany 2Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA 3Elettra Sincrotr...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Physical Review B

سال: 2015

ISSN: 1098-0121,1550-235X

DOI: 10.1103/physrevb.91.125442